Nexperia Launches E-mode GAN FET Supporting Low and High Voltage Applications
Time: 2023-06-21
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Nexperia, a high-capacity production expert in the field of basic semiconductor devices, announced today the launch of the first batch of E-mode (enhanced) power GaN FETs that support low voltage (100/150 V) and high voltage (650 V) applications. Nexperia has added seven new E-mode devices to its cascaded gallium nitride product line, from GaN FETs to other silicon based power devices. Nexperia's rich product portfolio provides designers with the best choices.