Nexperia's first SiC MOSFET improves safety, robustness, and reliability standards for industrial power switch applications
Time: 2023-11-30
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Nexperia announced today the launch of its first silicon carbide (SiC) MOSFET and two 1200 V discrete devices in a 3-pin TO-247 package, with RDS (on) of 40 m Ω and 80 m Ω, respectively. NSF040120L3A0 and NSF080120L3A0 are the first products released in Nexperia's SiC MOSFET product portfolio. Subsequently, Nexperia will continue to expand its product lineup, launching multiple devices with different RDS (on), and offering through hole packaging and surface mount packaging for selection.