Anson Mei releases vertical gallium nitride (GaN) semiconductor: for the fields of artificial intelligence (AI) and electrification
Bring breakthrough technology
Based on the new GaN on GaN technology, Ansenmei's vertical GaN architecture sets a new benchmark for power density, energy efficiency, and durability
core summary
As global energy demand surges due to AI data centers, electric vehicles, and other high energy consuming applications, ON Semiconductor has launched vertical gallium nitride (vGaN) power semiconductors, setting a new benchmark for power density, energy efficiency, and durability in related applications. These groundbreaking new generation GaN on GaN power semiconductors enable current to flow vertically through compound semiconductors, enabling higher operating voltages and faster switching frequencies, helping AI data centers, electric vehicles (EVs), renewable energy, and aerospace industries achieve more energy-efficient, lightweight, and compact systems.
key points
·The proprietary GaN on GaN technology enables higher voltage vertical current conduction, supporting faster switching speeds and more compact designs.
·This breakthrough solution reduces energy and heat losses by nearly 50%.
·Developed by Anson's R&D team in Syracuse, New York, covering over 130 patents in basic processes, device architecture, manufacturing, and system innovation.
·Ansenmei provides early customers with 700V and 1200V device samples.
Anson's vertical GaN technology is a groundbreaking power semiconductor technology that sets a new benchmark for energy efficiency, power density, and durability in the era of AI and electrification. This technology is developed and manufactured at Anson's factory in Syracuse, New York, and has obtained over 130 global patents covering basic processes, device design, manufacturing, and system innovation for vertical GaN technology.
Vertical GaN is a technological breakthrough that disrupts the industry landscape and consolidates ON Semiconductor's leading position in energy efficiency and innovation. With electrification and artificial intelligence reshaping the industrial landscape, energy efficiency has become a new benchmark for measuring progress. The addition of vertical GaN technology to our power product portfolio empowers customers to break through performance boundaries, making it an ideal choice for creating more competitive products. Ansenmei's breakthrough is ushering in a future where energy efficiency and power density are the key to victory. ”Dinesh Ramanathan, Senior Vice President of Corporate Strategy at Ansenmei, said.
The world is entering a new era, and energy is becoming a key constraint on technological progress. From electric vehicles and renewable energy to AI data centers that even exceed the electricity consumption of some cities today, the growth rate of electricity demand far exceeds our ability to efficiently generate and transmit electricity. Nowadays, every watt of energy saving is crucial.
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Ansenmei's vertical gallium nitride technology adopts a single-chip design, which can cope with high voltage of 1200 volts and above, high-frequency switching high current, and excellent energy efficiency. The high-end power system built based on this technology can reduce energy loss by nearly 50%, and due to its higher operating frequency, the size of passive components such as capacitors and inductors can be reduced by about half. Moreover, compared to currently available horizontal GaN devices, the volume of vertical GaN devices is about one-third. Therefore, Anson's vertical gallium nitride is particularly suitable for key high-power applications that require strict requirements for power density, thermal performance, and reliability, including:
·AI Data Center: Reduce the number of components, improve the power density of the 800V DC-DC converter in AI computing systems, and significantly optimize the cost of a single rack
·Electric vehicles: Creating smaller, lighter, and more efficient inverters to enhance the range of electric vehicles
·Charging infrastructure: achieving faster, smaller, and more robust charging devices
·Renewable energy: Enhancing the voltage processing capability of solar and wind inverters to reduce energy loss
·Energy Storage System (ESS): Provides fast, efficient, and high-density bidirectional power supply for battery inverters and microgrids
·Industrial Automation: Developing motor drives and robot systems with smaller size, better heat dissipation performance, and higher energy efficiency
·Aerospace: Creating solutions with stronger performance, higher robustness, and more compact design
Most GaN devices currently available on the market use non gallium nitride substrates, mainly silicon or sapphire substrates. For ultra-high voltage devices, Anson's vertical gallium nitride (vGaN) uses GaN on GaN technology, allowing current to flow vertically through the chip rather than laterally along the surface. This design can achieve higher power density, superior thermal stability, and still maintain robust performance under extreme conditions. With these advantages, vGaN comprehensively surpasses GaN on silicon and GaN on sapphire devices, providing higher voltage resistance, switching frequency, reliability, and durability. This helps to develop smaller, lighter, and more efficient power systems while reducing heat dissipation requirements and overall system costs. The main advantages include:
• Higher power density: Vertical GaN can withstand higher voltage and current in a smaller size
• Higher energy efficiency: reduces energy loss during power conversion, lowers heat generation and cooling costs
• More compact system: higher switching frequency can reduce the size of passive components such as capacitors and inductors
supply
At present, Ansenmei is providing samples to early customers.
