Nexperia's new products include five E-mode GaN FETs with a rated voltage of 650 V (RDS (on) values ranging from 80 m Ω to 190 m Ω), offering two packaging options: DFN 5x6 mm and DFN 8x8 mm. These products can improve power conversion efficiency in high voltage (<650 V), low-power data communication/telecommunications, consumer charging, solar energy, and industrial applications. They can also be used in high-precision brushless DC motors and compact server designs to achieve higher torque and greater power.
Nexperia now also offers 100 V (3.2 m Ω) GaN FETs in WLCSP8 packaging and 150 V (7 m Ω) GaN FETs in FCLGA packaging. These devices are suitable for various low voltage (<150 V) and high-power applications, such as efficient DC-DC converters used in data centers, fast charging (electric travel and USB-C), small-sized LiDAR transceivers, low noise Class D audio amplifiers, and higher power density consumer devices such as mobile phones, laptops, and game consoles.
In many power conversion applications, GaN FETs can achieve higher power efficiency with their compact solution size, significantly reducing material (BOM) costs. Therefore, GaN devices have gradually been widely used in the mainstream power electronics market, including server computing, industrial automation, consumer applications, and telecommunications infrastructure. GaN based devices have fast conversion/switching capabilities (high dv/dt and di/dt), providing excellent efficiency in low-power and high-power conversion applications. Nexperia's E-mode GaN FET has excellent switching performance, thanks to extremely low Qg and QOSS values, and low RDS (on), which helps achieve higher power efficiency design.
These new devices further expand Nexperia's rich range of GaN FET products, suitable for various power conversion applications. The product portfolio includes cascaded devices that support high voltage and high power applications, 650 V E-mode devices that support high voltage and low power applications, and 100/150 V E-mode devices that support low voltage and high power applications. In addition, the Nexperia E-mode GaN FET is manufactured using an 8-inch wafer production line to increase production capacity, meeting industrial grade JEDEC standards. Nexperia's GaN device product series continues to expand, fully reflecting Nexperia's commitment to promoting the development of high-quality silicon devices and wide bandgap technology.
About Nexperia
Nexperia, headquartered in the Netherlands, is a global semiconductor company with a rich and long history of development in Europe. Currently, it has more than 15000 employees in Europe, Asia, and the United States. As a leader in the development and production of basic semiconductor devices, Nexperia's devices are widely used in automotive, industrial, mobile, and consumer industries
