Infineon Technologies launches new CoolSiC ™ JFET power semiconductor devices, based on silicon carbide technology, have ultra-low conduction loss, excellent turn off performance, and high reliability. They can meet the requirements of efficient and reliable power distribution in industrial and automotive applications such as solid-state circuit breakers, AI data center hot swappable modules, electronic fuses, and motor soft starters. Their excellent short-circuit withstand capability and thermal stability provide key technical support for solid-state protection systems.
Technological breakthrough: Upgrading the performance of silicon carbide
Infineon CoolSiC ™ The JFET series achieves three core breakthroughs through ultra-low on resistance and advanced packaging technology:
1. Reduce conduction loss by 50%: The first generation product RDS (ON) is as low as 1.5m Ω (750V)/2.3m Ω (1200V), reducing energy consumption by 30% compared to traditional SiC MOSFETs.
2. Improved heat dissipation efficiency: Adopting XT interconnect technology and diffusion soldering process reduce transient thermal resistance by 40% and support wide temperature operation from -40 ℃ to 125 ℃ for 28.
3. Fault tolerance enhancement: Optimize channel design to increase reliability by three times under short-circuit/avalanche conditions, with MTBF exceeding 100000 hours.
Industry Value: Energy Efficiency and System Optimization
1. Energy efficiency improvement: In data center hot swappable modules, system energy efficiency has been increased from 95% to 98%, with an annual power savings of up to 120MWh (taking a 10MW data center as an example).
2. Volume reduction: Q-DPAK packaging supports high-density layout, reducing the volume of power distribution units by 50%, suitable for compact spaces in vehicles.
3. Cost optimization: Integrating bootstrap circuits and overvoltage protection, reducing the number of peripheral components by 30%, and lowering BOM costs by 20%.
Technical difficulties and solutions
● Heat dissipation challenge: Local temperature is prone to exceed limits under high power density → Adopting copper pillar heat dissipation+top cooling design, temperature rise control<25 ℃ 78.
Electromagnetic interference: High frequency switching causes EMI to exceed the standard → Built in RC buffer circuit, certified by CISPR32 Class B 29.
● Parallel uneven current: Multiple module parallel current deviation → Optimize gate drive consistency, deviation rate<5% 14.
Application scenarios and market prospects
Core scenario
Smart grid: Solid state circuit breakers (SSCBs) achieve microsecond level fault cutting, which is 1000 times faster than mechanical circuit breakers.
Electric vehicles: The battery isolation switch supports an 800V high voltage platform, increasing the range by 5%.
Industrial automation: Motor soft starter reduces starting current shock and extends equipment life by 30% 39.
Market forecasting
The market size of SiC power devices is expected to reach 8.9 billion US dollars by 2025, with a compound annual growth rate of 34%.
Infineon aims to occupy 25% of the market share and increase its production capacity to 500000 pieces per year by 2026.
Future prospects: Technological iteration and ecological layout
1. Voltage Expansion: The 3.3kV version will be launched in 2027, covering the demand for wind power and rail transit.
2. Intelligent integration: Embedded with IoT communication interfaces (such as CAN FD), supporting remote fault diagnosis and OTA upgrades.
3. Material innovation: Developed aluminum nitride substrate, with thermal conductivity increased to 200W/mK and power density further increased by 30%.
conclusion
Infineon CoolSiC ™ JFET has redefined the technical standards for solid-state power distribution through ultra-low loss and industrial grade reliability. Its technical parameters are comprehensively ahead of competitors, and the production pace precisely matches the explosive demand for new energy vehicles and smart grids, which is expected to become the core growth pole of the silicon carbide market. With the release of production capacity in 2026, this technology will accelerate the global energy transition process.
