The device reduces switching losses and improves efficiency, with Qrr as low as 105 nC, VF as low as 1.45 V, low junction capacitance, and short recovery time
Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of four models using eSMP technology ® The new devices VS-E7JX0112-M3 and VS-E7JX0212-M3 packaged in the SlimSMA HV (DO-221AC) series, as well as the AEC-Q101 certified VS-E7JX0112HM3 and VS-E7JX0212HM3, further expand their seventh generation 1200 V FRED Pt ® Super fast recovery rectifier platform lineup. The 1A and 2A rectifiers have been optimized for industrial and automotive applications. Among similar devices, they not only achieve a balance between reverse charge recovery (Qrr) and forward voltage drop, but also have lower junction capacitance and shorter recovery time.
The recently released Vishay Semiconductors rectifiers include VS-E7JX0112-M3 and VS-E7JX0212-M3, as well as VS-E7JX0112HM3 and VS-E7JX0212HM3 certified by AEC-Q101. In order to reduce switching losses and improve efficiency, the device integrates features such as fast recovery time as low as 45 ns, Qrr as low as 105 nC (typical value), forward voltage drop as low as 1.45 V, and junction capacitance as low as 2.5 pF. The reliable rectifier adopts a small package of 2.6 mm x 5.2 mm, with a non repetitive peak surge current of up to 21 A and a thickness as low as 0.95 mm, while SMA packaged devices with similar package sizes are 2.3 mm. The minimum creepage distance of the device is only 3.2 mm, and the relative leakage trace index (CTI) of the molding material is ≥ 600 (material group I). On the basis of meeting the high voltage application requirements of IEC 60664-1, it helps to reduce the number of components and lower the bill of materials (BOM) cost.
VS-E7JX0112-M3, VS-E7JX0112HM3, VS-E7JX0212-M3, and VS-E7JX0212HM3 can be used as clamp, buffer, and freewheeling diodes for flyback auxiliary power supplies, as well as high-frequency rectifiers for bootstrap driver functions. They can also provide de saturation and protection for the latest fast switching IGBTs and high-voltage Si/SiC MOSFETs. Typical applications of devices include industrial drivers and tools, electric vehicle (EV) on-board chargers and motors, power generation and energy storage systems, as well as Ć uk converters and industrial LED SEPIC circuits.
The rectifier adopts a planar structure and is controlled by platinum doping lifetime to ensure the reliability and stability of the system without affecting performance. At the same time, optimized stored charge and low recovery current can minimize switching losses and reduce power consumption. The device complies with RoHS standards, is halogen-free, and has a moisture sensitivity level of J-STD-020 standard level 1. It can operate at a high temperature of+175 ° C.
Device specification table:
| Product Number | VS-E7JX0112-M3 | VS-E7JX0112HM3 | VS-E7JX0212-M3 | VS-E7FX0212HM3 |
| IF(AV) | 1 A | 1 A | 2 A | 2 A |
VR | 1200 V |
| VF under IF | 1.45 V | 1.45 V | 1.60 V | 1.60 V |
| trr | 50 ns | 50 ns | 45 ns | 45 ns |
| Qrr | 105 nC | 105 nC | 165 nC | 165 nC |
| CT | 2.5 pF | 2.5 pF | 3.0 pF | 3.0 pF |
| IFSM | 14 A | 14 A | 21 A | 21 A |
| encapsulation | SlimSMA HV (DO-221AC) |
| AEC-Q101 | No | yes | No | yes |
The new seventh generation rectifier can now provide samples and has achieved mass production, with a supply cycle of 8 weeks.
