Infineon Technologies Inc. (FSE code: IFX/OTC QX code: IFNNY) has recently launched two new CoolGaN ™ Product technology: CoolGaN ™ Bidirectional Switch (BDS) and CoolGaN ™ Smart Sense. CoolGaN? BDS has excellent soft and hard switching performance, providing bidirectional switching of 40V, 650V, and 850V voltages, suitable for mobile device USB ports, battery management systems, inverters, rectifiers, and more. The CoolGaN? Smart Sense product features non-destructive current detection, simplifying design and further reducing power loss, while integrating various transistor switching functions into one package, suitable for consumer USB-C chargers and adapters.
CoolGaN? BDS and CoolGaN ™ Smart Sense
CoolGaN? BDS high-voltage products are available in two models, 650 V and 850 V, using true normally closed single chip bidirectional switches with four operating modes. This series of semiconductor devices is based on gate injection transistor (GIT) technology and has two discrete gates with substrate terminals and independent isolation control. They use the same drift region to block voltage in both directions, exhibiting excellent performance even in the case of repeated short circuits. By using one BDS instead of four traditional transistors, efficiency, density, and reliability can be improved, allowing applications to benefit and significantly save costs. When replacing single-phase H4 PFC, HERIC inverters, and back-to-back switches in three-phase Vienna rectifiers, this series of devices can optimize performance and can also be used for single-stage AC power conversion in AC/DC or DC/AC topologies.
CoolGaN? BDS 40 V is a normally closed single-chip bidirectional switch based on Infineon Schottky gate gallium nitride autonomous technology. It can block voltage in two directions and has been optimized through a single gate common source design to replace the back-to-back MOSFET used as a disconnect switch in battery powered consumer products. First 40 V CoolGaN ™ The RDS (on) value of BDS products is 6 m Ω, and a series of products will be launched in the future. Compared to back-to-back silicon FETs, the advantages of using 40 V GaN BDS include saving 50% -75% of PCB area, reducing power loss by more than 50%, and reducing costs.
The CoolGaN? Smart Sense product has a 2 kV electrostatic discharge tolerance and can be connected to the controller for current sensing to achieve peak current control and overcurrent protection. The current detection response time is about 200 ns, which is less than or equal to the hidden time of a regular controller, and has extremely high compatibility.
Using these devices can improve efficiency and save costs. Compared to traditional 150m Ω GaN transistors, CoolGaN? Smart Sense products can provide similar efficiency and thermal performance at lower costs with higher RDSs (on) (e.g. 350 m Ω). In addition, these devices are compatible with Infineon's discrete CoolGaN ™ The packaging pins are compatible, eliminating the need for layout rework and PCB re soldering, further facilitating the design of Infineon GaN devices.
Supply situation
CoolGaN with a 6 m Ω model ™ The BDS 40 V engineering samples have been launched, and the engineering samples for the 4 m Ω and 9 m Ω models will be launched in the third quarter of 2024. The CoolGaN? BDS 650 V sample will be launched in the fourth quarter of 2024, and the 850 V sample will be available in early 2025. CoolGaN? Smart Sense samples will be launched in August 2024. For more information, please visit: https://www.infineon.com/cms/en/product/promopages/GaN-innovations/ .
