1200 V discrete devices provide excellent performance, helping accelerate global energy transformation
Nexperia, a high-capacity production expert in the field of basic semiconductor devices, announced today the launch of its first silicon carbide (SiC) MOSFET and two 1200 V discrete devices in a 3-pin TO-247 package, with RDS (on) of 40 m Ω and 80 m Ω, respectively. NSF040120L3A0 and NSF080120L3A0 are the first products released in Nexperia's SiC MOSFET product portfolio. Subsequently, Nexperia will continue to expand its product lineup, launching multiple devices with different RDS (on), and offering through hole packaging and surface mount packaging for selection. The two devices launched this time have high availability and can meet the needs of high-performance SiC MOSFETs for automotive and industrial applications such as electric vehicle (EV) charging stations, uninterruptible power supply (UPS), and solar and energy storage system (ESS) inverters.
"Nexperia and Mitsubishi Electric hope that these two debut products can stimulate more innovation and drive the emergence of more wide bandgap device suppliers in the market. Nexperia can now provide SiC MOSFET devices, which have multiple parameter performance surpassing similar products, such as high RDS (on)," said Katrin Feurle, Senior Director and SiC Product Manager at Nexperia Good temperature stability, low body diode voltage drop, strict threshold voltage specifications, and extremely balanced gate charge ratio can safely and reliably prevent parasitic conduction. This is the opening work of our commitment to collaborate with Mitsubishi Electric to produce high-quality SiC MOSFETs. Without a doubt, in the coming years, we will work together to promote the development of SiC device performance
Toru Iwagami, Senior General Manager of Power Devices Business at Mitsubishi Electric's Semiconductor and Devices Division, said, "We are pleased to collaborate with Nexperia to launch these new SiC MOSFETs, which are also the first products we have collaborated on. Mitsubishi Electric has accumulated rich professional knowledge in SiC power semiconductors, and our devices have achieved an excellent balance of multiple characteristics."
RDS (on) affects conducted power loss and is a key performance parameter of SiC MOSFETs. Nexperia found that this is also a factor that limits the performance of many SiC devices on the current market. The newly launched SiC MOSFET adopts innovative process technology, achieving industry-leading temperature stability. In the operating temperature range of 25 ℃ to 175 ℃, the nominal value of RDS (on) only increases by 38%.
The total gate charge (QG) of Nexperia SiC MOSFET is very low, which can achieve lower gate drive losses. In addition, Nexperia achieves a very low QGD to QGS ratio by balancing gate charges, which further enhances the device's immunity to parasitic conduction.
In addition to the positive temperature coefficient, the device to device threshold voltage VGS (th) of Nexperia's SiC MOSFET is also extremely low, which enables the device to achieve very balanced current carrying performance under both static and dynamic conditions when operating in parallel. In addition, lower body diode forward voltage (VSD) helps improve device robustness and efficiency, while also relaxing the dead time requirements for asynchronous rectification and freewheeling operations.
Nexperia also plans to launch automotive grade MOSFETs in the future. NSF040120L3A0 and NSF080120L3A0 have now been put into mass production. Please contact Nexperia sales representative to obtain a complete set of SiC MOSFET samples.
To learn more about Nexperia MOSFETs, please visit: https://www.nexperia.com/sic-mosfets
